High air stability of threshold voltage on gate bias stress in pentacene TFTs with a hydroxyl-free and amorphous fluoropolymer as gate insulators

被引：93

作者：

Umeda, Tokiyoshi ^{[1
]}

Kumaki, Daisuke ^{[2
]}

Tokito, Shizuo ^{[1
]}

机构：

[1] NHK Japan Broadcasting Corp, Setagaya Ku, Tokyo 1578510, Japan

[2] Tokyo Inst Technol, Dept Elect Chem, Midori Ku, Yokohama, Kanagawa 2268502, Japan

来源：

ORGANIC ELECTRONICS | 2008年 / 9卷 / 04期

关键词：

organic thin-film transistor; amorphous fluoropolymer; Cytop; air stable threshold voltage; bias stress; hysteresis; insulating properties;

D O I：

10.1016/j.orgel.2008.02.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the air stabilities of threshold voltages(V-th) on gate bias stress in pentacene thin-film transistors (TFTs) with a hydroxyl-free and amorphous fluoropolymer as gate insulators. The 40-nm-thick thin films of spin-coated fluoropolymer had excellent electrical insulating properties, and the pentacene TFTs exhibited negligible current hysteresis, low leakage current, a field-effect mobility of 0.45 cm(2)/Vs and an on/off current ratio of 3 x 10(7) when it was operated at -20 V in ambient air. After a gate bias stress of 10(4) s, a small Vth shift below 1.1 V was obtained despite non-passivation of the pentacene layer. We have discussed that the excellent air stability of V,1, was attributed to the insulator surface without hydroxyl groups. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：545 / 549

页数：5

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