Electron and hole g factors and exchange interaction from studies of the exciton fine structure in In0.60Ga0.40As quantum dots

被引:394
作者
Bayer, M [1 ]
Kuther, A
Forchel, A
Gorbunov, A
Timofeev, VB
Schäfer, F
Reithmaier, JP
Reinecke, TL
Walck, SN
机构
[1] Univ Wurzburg, D-97094 Wurzburg, Germany
[2] USN, Res Lab, Washington, DC 20375 USA
关键词
D O I
10.1103/PhysRevLett.82.1748
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Self-assembled In0.60Ga0.40As quantum dots (QD's) have been studied by single dot magnetophotoluminescence spectroscopy (B less than or equal to 8 T). At B = 0 a splitting of the exciton (X) emission is observed which we ascribe to an asymmetry of the confinement potential. With increasing B the emission splits into a quadruplet corresponding to the m = +/-2 and +/-1 X states, which originates from a reduction of the cubic symmetry of the QD's. From the spectroscopic data we obtain values for the electron (e) and hole (h) g factors. We also determine the X singlet-triplet splitting which is found to be enhanced over bulk values by about an order of magnitude due to the increase of the e-h overlap in the QD's.
引用
收藏
页码:1748 / 1751
页数:4
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