Structural and radiative evolution in quantum dots near the InxGa1-xAs/GaAs Stranski-Krastanow transformation

被引：58

作者：

Leon, R ^{[1
]}

Fafard, S

机构：

[1] Australian Natl Univ, Res Sch Phys Sci, Canberra, ACT 0200, Australia

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.58.R1726

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The evolution of Stranski-Krastanow (SK) quantum-dot (QD) formation in ternary In0.6Ga0.4As/GaAs was studied with graded structures grown via organometallic vapor-phase epitaxy. Surface-probe microscopy showed island evolution between 3.5- and 6.5-monolayer (ML) deposition. Island densities increased exponentially (over three decades with 0.2-ML deposition) before saturation similar to 4.7 ML. Photoluminescence (PL) of capped structures show that the wetting-layer PL energy does not shift beyond the onset of the SK transition. PL intensities increased with QD concentration but not in proportion to QD density. After saturation, a sharp drop in PL intensity was observed, which we attribute to island coalescence and incoherent island formation. Excitation power dependence of the luminescence at different stages of QD evolution indicates a concentration dependence of optical saturation in self-forming InxGa1-xAs QD's.

引用

页码：R1726 / R1729

页数：4

共 11 条

[1] Quantum dot resonant cavity photodiode with operation near 1.3 mu m wavelength [J].

Campbell, JC ;

Huffaker, DL ;

Deng, H ;

Deppe, DG .

ELECTRONICS LETTERS, 1997, 33 (15) :1337-1339

[2] GROWTH-MORPHOLOGY AND THE EQUILIBRIUM SHAPE - THE ROLE OF SURFACTANTS IN GE/SI ISLAND FORMATION [J].

EAGLESHAM, DJ ;

UNTERWALD, FC ;

JACOBSON, DC .

PHYSICAL REVIEW LETTERS, 1993, 70 (07) :966-969

[3] SELECTIVE EXCITATION OF THE PHOTOLUMINESCENCE AND THE ENERGY-LEVELS OF ULTRASMALL INGAAS/GAAS QUANTUM DOTS [J].

FAFARD, S ;

LEONARD, D ;

MERZ, JL ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1388-1390

[4]

FAFARD S, UNPUB

[5]

Fafard S., 1995, PHYS REV B, V52, P5752

[6] In situ, atomic force microscope studies of the evolution of InAs three-dimensional islands on GaAs(001) [J].

Kobayashi, NP ;

Ramachandran, TR ;

Chen, P ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 1996, 68 (23) :3299-3301

[7] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS [J].

LEONARD, D ;

POND, K ;

PETROFF, PM .

PHYSICAL REVIEW B, 1994, 50 (16) :11687-11692

[8] 1.3 mu m photoluminescence from InGaAs quantum dots on GaAs [J].

Mirin, RP ;

Ibbetson, JP ;

Nishi, K ;

Gossard, AC ;

Bowers, JE .

APPLIED PHYSICS LETTERS, 1995, 67 (25) :3795-3797

[9] Photocarrier recombination in AlyIn1-yAs/AlxGa1-x as self-assembled quantum dots [J].

Raymond, S ;

Fafard, S ;

Charbonneau, S ;

Leon, R ;

Leonard, D ;

Petroff, PM ;

Merz, JL .

PHYSICAL REVIEW B, 1995, 52 (24) :17238-17242

[10] EFFECT OF SURFACE-TENSION ON THE GROWTH MODE OF HIGHLY STRAINED INGAAS ON GAAS(100) [J].

SNYDER, CW ;

ORR, BG ;

MUNEKATA, H .

APPLIED PHYSICS LETTERS, 1993, 62 (01) :46-48

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