Pt-assisted oxidation of (100)-Ge/high-k interfaces and improvement of their electrical quality

被引:20
作者
Henkel, Christoph [1 ]
Bethge, Ole [1 ]
Abermann, Stephan [2 ]
Puchner, Stefan [3 ]
Hutter, Herbert [4 ]
Bertagnolli, Emmerich [1 ]
机构
[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria
[2] Austrian Inst Technol GmbH AIT, Dept Energy, A-1210 Vienna, Austria
[3] Kompetenzzentrum Automobil & Ind Elekt GmbH KAI, A-9524 Villach, Austria
[4] Vienna Univ Technol, Inst Chem Technol & Analyt, A-1060 Vienna, Austria
基金
奥地利科学基金会;
关键词
GE;
D O I
10.1063/1.3500822
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report on the improvement of electrical quality of (100)-Ge/high-k-dielectric interfaces by introducing thin Pt top layers on the dielectric and subsequent oxidative treatments or using a Pt-deposition process with inherent oxidative components. Here, deposition of thin physical vapor deposition-Pt layers, combined with subsequent oxygen treatments, or oxygen assisted atomic layer deposition of Pt on these dielectrics, is applied. Strong reduction of interface trap densities down to mid-10(11) eV(-1) cm(-2) is achieved. The approach is shown for Pt/ZrO2 /La2O3 /Ge, Pt/ZrO2/GeO2/Ge, and Pt/ZrO2/Ge gate stacks. By x-ray photoelectron spectroscopy evidence is given for oxygen enrichment at Ge/high-k-dielectric interfaces, to be responsible for the improved electrical properties. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3500822]
引用
收藏
页数:3
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