Adatom diffusion at GaN (0001) and (000(1)over-bar) surfaces

被引:421
作者
Zywietz, T [1 ]
Neugebauer, J [1 ]
Scheffler, M [1 ]
机构
[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
关键词
D O I
10.1063/1.121909
中图分类号
O59 [应用物理学];
学科分类号
摘要
The diffusion of Ga and N adatoms has been studied for the technologically relevant wurtzite (<000(1)over bar>) and (0001) surfaces employing density-functional theory. Our calculations reveal a very different diffusivity for Ga and N adatoms on the equilibrium surfaces: While Ga is very mobile at typical growth temperatures, the diffusion of N is by orders of magnitude slower. These results give a very detailed insight of how and under which growth conditions N adatoms can be stabilized and efficiently incorporated at the surface. We further find that the presence of excess N strongly increases the Ga diffusion barrier and discuss the consequences for the growth of GaN. (C) 1998 American Institute of Physics.
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页码:487 / 489
页数:3
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