Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues

被引：330

作者：

Gusev, EP

Cartier, E

Buchanan, DA

Gribelyuk, M

Copel, M

Okorn-Schmidt, H

D'Emic, C

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] IBM Corp, Analyt Serv, Hopewell Jct, NY 12533 USA

来源：

MICROELECTRONIC ENGINEERING | 2001年 / 59卷 / 1-4期

关键词：

high-k gate dielectrics; Al2O3; ZrO2; HfO2; Y2O3;

D O I：

10.1016/S0167-9317(01)00667-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of our recent work, on ultrathin (< 100 Angstrom) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al2O3, ZrO2, HfO2, and Y2O3 will be shown to illustrate the complex processing, integration and device-related issues for high dielectric constant ('high-K') materials. Both physical and electrical properties, as well as the effects of pre- and post-deposition treatments will be discussed. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：341 / 349

页数：9

共 39 条

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