Photomodulated reflectivity of Zn1-xMnxTe/ZnTe multiple quantum wells

被引:7
作者
Klar, PJ
Wolverson, D
Ashenford, DE
Lunn, B
机构
[1] UNIV E ANGLIA, SCH PHYS, NORWICH NR4 7TJ, NORFOLK, ENGLAND
[2] UNIV HULL, DEPT ENGN DESIGN & MANUFACTURE, KINGSTON UPON HULL HU6 7RX, N HUMBERSIDE, ENGLAND
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1016/0022-0248(96)80026-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A Zn0.93Mn0.07Te/ZnTe multiple quantum well sample has been studied by modulation spectroscopy using conventional photoreflectivity with above-band-gap laser modulation (a-PR) as well as by a novel version of the technique which employs below-band-gap laser modulation (b-PR). For both techniques, temperature dependent measurements from 10 to 150 K were carried out and, for b-PR, modulation frequency dependent measurements over the range 40-13 kHz were also performed. Although the appearance of the b-PR spectra is different from the a-PR spectra, both techniques give the same spectroscopic information. There is evidence that b-PR is, like a-PR, a form of electroreflectance spectroscopy. However, while the a-PR modulation mechanism is mainly determined by photoexcitation across the band gap, the photoexcitation of deep levels seems to be the dominant mechanism for b-PR.
引用
收藏
页码:528 / 532
页数:5
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