Reactive ion etching of GaSb and GaAlSb using SiCl4

被引：7

作者：

Ou, SS ^{[1
]}

机构：

[1] IND TECHNOL RES INST,OPTOELECT & SYST LABS,CHUTUNG,TAIWAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.588811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reactive ion etching of GaSb and GaAlSb using pure SiCl4 was investigated. Etching rate and etching profiles were characterized as functions of working pressure, chamber background pressure, flow rate, and power density. The etching rate and profile of metal organic chemical vapor deposited-grown GaSb and GaAlSb thin films are strongly dependent on background pressure and applied power. These interesting characteristics can be applied to control selective or nonselective etchings for device fabrication. Etching profiles exhibited a high degree of anisotropy and smooth surface morphologies. (C) 1996 American Vacuum Society.

引用

页码：3226 / 3229

页数：4

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