Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors

被引：38

作者：

Phillips, J ^{[1
]}

Kamath, K ^{[1
]}

Brock, T ^{[1
]}

Bhattacharya, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 26期

关键词：

D O I：

10.1063/1.121643

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the de characteristics of InGaAs/AlGaAs modulation doped field effect transistors in which a layer of self-organized InAs quantum dots is inserted adjacent to the pseudomorphic quantum well channel. Distinct steps and a negative differential resistance are observed in the current-voltage characteristics at room temperature and lower temperatures. These are attributed to conduction through the bound states in the quantum dots. (C) 1998 American Institute of Physics.

引用

页码：3509 / 3511

页数：3

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