X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

被引：16

作者：

King, P. D. C.

Veal, T. D.

Hatfield, S. A.

Jefferson, P. H.

McConville, C. F. ^{[1
]}

Kendrick, C. E.

Swartz, C. H.

Durbin, S. M.

机构：

[1] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

[2] Univ Canterbury, MacDiarmid Inst Adv Mat & Nanotechnol, Christchurch 8140, New Zealand

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2783214

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

引用

页数：3

共 26 条

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