Effects of transverse doping variations on the transient response of silicon avalanche shaper devices

被引：10

作者：

Jalali, H

Joshi, RP

Gaudet, JA

机构：

[1] Old Dominion Univ, Dept Elect & Comp Engn, Norfolk, VA 23529 USA

[2] USAF, Res Lab, Directed Energy Directorate, AFRL,DE, Kirtland AFB, NM 87117 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

avalanche breakdown; power semiconductor switches; semiconductor device modeling; silicon;

D O I：

10.1109/16.704376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional (2-D) drift-diffusion simulations were performed to study the transient response of silicon avalanche shaper (SAS) devices that are used in high-power switching and pulse sharpening applications, The role of transverse doping variations on the transient device response has been studied. Our results clearly reveal a potential for filamentary current conduction. The filamentation, however, is shown to be strongly dependent on the transverse doping characteristics, and hence in principle, could be tailored.

引用

页码：1761 / 1768

页数：8

共 28 条

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[Anonymous], 1982, Numerical analysis for semiconductor devices

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