Carrier compensation in semiconductors with buried metallic nanoparticles

被引：10

作者：

Driscoll, DC ^{[1
]}

Hanson, MP ^{[1
]}

Gossard, AC ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2005年 / 97卷 / 01期

关键词：

D O I：

10.1063/1.1808473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown composite epitaxial materials consisting of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Although the addition of ErAs particles into the InGaAs matrix increases the free-electron concentration, compensation of these free electrons is possible by depleting electrons from the metal particles through Be acceptor doping of the semiconductor. The room-temperature electron concentration of an ErAs:InGaAs superlattice sample with 0.05 monolayer ErAs per layer can be reduced by >10(4) by delta-doping the ErAs layers with 7x10(12) cm(-2) of Be. The highest resistivity measured for a Be-doped ErAs:InGaAs superlattice was 350 Omega cm. (C) 2004 American Institute of Physics.

引用

页数：3

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