Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices

We utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's Si-29 hyperfine spectrum identifies it as a K center which we refer to as K-N. The generation of K-N centers provides an explanation for the instability's enhancement in nitrided devices. (c) 2007 American Institute of Physics.