Low driving voltages and memory effect in organic thin-film transistors with a ferroelectric gate insulator

被引：74

作者：

Velu, G

Legrand, C

Tharaud, O

Chapoton, A

Remiens, D

Horowitz, G

机构：

[1] Univ Littoral & Cote Opale, LEMCEL, UPRES, EA 2601, F-62228 Calais, France

[2] Univ Sci & Technol Lille, IEMN, DHS, CNRS,UMR 9929, F-59652 Villeneuve Dascq, France

[3] Univ Valenciennes, LAMAC, UPRES, EA 2443, F-59600 Maubeuge, France

[4] CNRS, Mat Mol Lab, F-94320 Thiais, France

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 05期

关键词：

D O I：

10.1063/1.1379059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, two organic thin-film transistors with SiO2 and ferroelectric PbZrTiO3 (PZT) gate insulator are compared. The fabrication of the devices is described and their electrical properties estimated. The PZT-based devices show better performance: Low driving voltage, high Ion/Ioff ratio, etc. Moreover, a memory effect is reported in correlation with ferroelectric properties of PZT thin films. (C) 2001 American Institute of Physics.

引用

收藏

页码：659 / 661

页数：3

相关论文

共 19 条

[1] Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal-ferroelectric-metal-insulator-semiconductor structure [J].

Ashikaga, K ;

Ito, T .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (10) :7471-7476

[2] Field-effect transistors made from solution-processed organic semiconductors [J].

Brown, AR ;

Jarrett, CP ;

deLeeuw, DM ;

Matters, M .

SYNTHETIC METALS, 1997, 88 (01) :37-55

[3] Structure control of Pb(Zr,Ti)O-3 films using PbTiO3 buffer layers produced by magnetron sputtering [J].

Cattan, E ;

Velu, G ;

Jaber, B ;

Remiens, D ;

Thierry, B .

APPLIED PHYSICS LETTERS, 1997, 70 (13) :1718-1720

[4] Experimental characterization and modeling of a ferroelectric bulk channel field effect transistor with nonvolatile memory characteristics [J].

Chen, FY ;

Fang, YK ;

Sun, MJ ;

Chen, JR .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :812-814

[5] Low-voltage organic transistors on plastic comprising high-dielectric constant gate insulators [J].

Dimitrakopoulos, CD ;

Purushothaman, S ;

Kymissis, J ;

Callegari, A ;

Shaw, JM .

SCIENCE, 1999, 283 (5403) :822-824

[6] AN ANALYTICAL MODEL FOR ORGANIC-BASED THIN-FILM TRANSISTORS [J].

HOROWITZ, G ;

DELANNOY, P .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (01) :469-475

[7] Gate voltage dependent mobility of oligothiophene field-effect transistors [J].

Horowitz, G ;

Hajlaoui, R ;

Fichou, D ;

El Kassmi, A .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3202-3206

[8]

Klauk H, 2000, SOLID STATE TECHNOL, V43, P63

[9] Depletion-type thin-film transistors with a ferroelectric insulator [J].

Prins, MWJ ;

Zinnemers, SE ;

Cillessen, JFM ;

Giesbers, JB .

APPLIED PHYSICS LETTERS, 1997, 70 (04) :458-460

[10] Low-voltage 0.1 μm organic transistors and complementary inverter circuits fabricated with a low-cost form of near-field photolithography [J].

Rogers, JA ;

Dodabalapur, A ;

Bao, ZN ;

Katz, HE .

APPLIED PHYSICS LETTERS, 1999, 75 (07) :1010-1012