Self-aligned TiN formation by N-2 plasma bias treatment of TiSi2 deposited by selective chemical vapor deposition

The titanium nitride (TiN) formation technology described here uses nitrogen plasma bias treatment to form self-aligned TIN only on the diffused layer from titanium silicide (TiSi2) prepared by selective chemical vapor deposition (CVD). The nitriding was performed using magnetron sputtering equipment with an rf plasma source. Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and etching in 1% HF were used to characterize the samples. The contacts fabricated with the Al-2%Si/TiN/TiSi2/Si barrier technology exhibit low resistivities of about 10(-7) Omega . cm(2). No excessive leakage of the 0.2-mu m shallow junctions was observed even after thermally stressing the samples at 500 degrees C for 30 min.