A NOVEL SELF-ALIGNED TIN FORMATION BY N2+ IMPLANTATION DURING 2-STEP ANNEALING TI-SALICIDATION FOR SUBMICROMETER CMOS TECHNOLOGY APPLICATION

被引：2

作者：

CHEN, CW ^{[1
]}

FANG, YK ^{[1
]}

HSIEH, JC ^{[1
]}

LIANG, MS ^{[1
]}

机构：

[1] TAIWAN SEMICOND MFG CO LTD,HSINCHU,TAIWAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 09期

关键词：

D O I：

10.1109/55.311127

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technology of self-aligned TiN/TiSi2 formation using N2+ implantation during two-step annealing Ti-salicidation process has been developed. The formation of TiN was confirmed by RBS analysis. The leakage currents of n+/p junction diodes fabricated using this technology were measured to investigate the phenomena of Al spiking into Si-substrate. The measured reverse-bias leakage current of diode per unit junction area with Al/TiN/TiSi2 contact is 1.2 nA/cm2 at -5 V, which is less than all of reported data. Also it can sustain the annealing process for 30 min at 500-degrees-C. Thus, TiN formed with this technology process is suggested as a very effective barrier layer between TiSi2 and Al for submicron CMOS technology applications.

引用

页码：339 / 341

页数：3

共 12 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].