SELF-ALIGNED TIN BARRIER FORMATION BY RAPID THERMAL NITRIDATION OF TISI2 IN AMMONIA

被引：8

作者：

KAMGAR, A ^{[1
]}

BAIOCCHI, FA ^{[1
]}

EMERSON, AB ^{[1
]}

SHENG, TT ^{[1
]}

VASILE, MJ ^{[1
]}

HAYNES, RW ^{[1
]}

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.344246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2395 / 2401

页数：7

共 6 条

[1] HIGH-TEMPERATURE RAPID THERMAL NITRIDATION OF SILICON DIOXIDE FOR FUTURE VLSI APPLICATIONS [J].

CHANG, CC ;

KAMGAR, A ;

KAHNG, D .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :476-478

[2] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM [J].

DELFINO, M ;

BROADBENT, EK ;

MORGAN, AE ;

BURROW, BJ ;

NORCOTT, MH .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) :591-593

[3] NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE [J].

KANEKO, H ;

KOYANAGI, M ;

SHIMIZU, S ;

KUBOTA, Y ;

KISHINO, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1702-1709

[4] INSITU INVESTIGATION OF TIN FORMATION ON TOP OF TISI2 [J].

WILLEMSEN, MFC ;

KUIPER, AET ;

READER, AH ;

HOKKE, R ;

BARBOUR, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01) :53-61

[5] NITROGEN, OXYGEN, AND ARGON INCORPORATION DURING REACTIVE SPUTTER DEPOSITION OF TITANIUM NITRIDE [J].

WILLIAMS, DS ;

BAIOCCHI, FA ;

BEAIRSTO, RC ;

BROWN, JM ;

KNOELL, RV ;

MURARKA, SP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06) :1723-1729

[6] SELF-ALIGNED DIFFUSION BARRIER BY NITRIDATION OF TISI2 [J].

WITTMER, M .

APPLIED PHYSICS LETTERS, 1988, 52 (19) :1573-1575

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