SELF-ALIGNED DIFFUSION BARRIER BY NITRIDATION OF TISI2

被引：15

作者：

WITTMER, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 19期

关键词：

D O I：

10.1063/1.99701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1573 / 1575

页数：3

共 14 条

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ALVI, NS .

APPLIED PHYSICS LETTERS, 1987, 50 (22) :1598-1600

[7] SIMULTANEOUS FORMATION OF TIN AND TISI2 BY LAMP ANNEALING IN NH3 AMBIENT AND ITS APPLICATION TO DIFFUSION-BARRIERS [J].

OKAMOTO, T ;

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[8]

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[10] CRYSTALLIZATION OF GE AND SI IN METAL-FILMS .2. [J].

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