STABLE, SELF-ALIGNED TINXOY/TISI2 CONTACT FORMATION FOR SUBMICRON DEVICE APPLICATIONS

被引：12

作者：

KU, YH ^{[1
]}

LOUIS, E ^{[1
]}

SHIH, DK ^{[1
]}

LEE, SK ^{[1
]}

KWONG, DL ^{[1
]}

ALVI, NS ^{[1
]}

机构：

[1] GM CORP,DELCO ELECTR,KOKOMO,IN 46902

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 22期

关键词：

D O I：

10.1063/1.97792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1598 / 1600

页数：3

共 11 条

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS
ADAMS, ED
AHN, KY
BRODSKY, SB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2264 - 2267
[2] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS
ALPERIN, ME
HOLLAWAY, TC
HAKEN, RA
GOSMEYER, CD
KARNAUGH, RV
PARMANTIE, WD
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 61 - 69
[3] PROPERTIES OF TIN OBTAINED BY N-2(+) IMPLANTATION ON TI-COATED SI WAFERS
ARMIGLIATO, A
CELOTTI, G
GARULLI, A
GUERRI, S
LOTTI, R
OSTOJA, P
SUMMONTE, C
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 446 - 448
[4] CHEN JY, 1984, SOLID STATE TECHNOL, V27, P145
[5] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM
DELFINO, M
BROADBENT, EK
MORGAN, AE
BURROW, BJ
NORCOTT, MH
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 591 - 593
[6] NOVEL SUBMICROMETER MOS DEVICES BY SELF-ALIGNED NITRIDATION OF SILICIDE
KANEKO, H
KOYANAGI, M
SHIMIZU, S
KUBOTA, Y
KISHINO, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1702 - 1709
[7] KANEKO H, 1985, DEC IEDM, P208
[8] PERFORMANCE OF TITANIUM NITRIDE DIFFUSION-BARRIERS IN ALUMINUM TITANIUM METALLIZATION SCHEMES FOR INTEGRATED-CIRCUITS
SUNI, I
BLOMBERG, M
SAARILAHTI, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06): : 2233 - 2236
[9] TIN FORMED BY EVAPORATION AS A DIFFUSION BARRIER BETWEEN AL AND SI
TING, CY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 14 - 18
[10] INVESTIGATION OF THE AL/TISI2/SI CONTACT SYSTEM
TING, CY
WITTMER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 937 - 943

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