Determining the impact of statistical fluctuations on resist line edge roughness

被引：13

作者：

Leunissen, LHA

Ercken, M

Patsis, GP

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] NCSR Demokritos, IMEL, GR-15310 Athens, Greece

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 78-79卷

关键词：

electron beam lithography; line edge roughness; shot noise;

D O I：

10.1016/j.mee.2004.12.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Line edge roughness of chemically amplified resists depends on many parameters. In a practical situation, all settings are chosen to be at their optimum, giving the smallest LER. Starting from this situation, the trade-off between four important parameters (shot noise, secondary electron drift, resist polymer size and post-exposure bake diffusion), is investigated in this paper. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：2 / 10

页数：9

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