Activation parameters for dislocation glide in α-SiC

被引：41

作者：

Samant, AV ^{[1
]}

Pirouz, P ^{[1
]}

机构：

[1] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA

来源：

INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 1998年 / 16卷 / 4-6期

关键词：

SiC; dislocations; compression; shear stress; activation parameters;

D O I：

10.1016/S0263-4368(98)00054-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The critical resolved shear stress for activating the [2<(11)over bar>0](0001) slip system of monocrystalline alpha-SiC (6H and 4H polytypes) has been determined as a function of test temperature and strain rate via constant-displacement compression tests. Tests were conducted at temperatures between 550 and 1300 degrees C and strain rates between 3.1 x 10(-5) s(-1) and 6.5 x 10(-4) s(-1). The current study shows that alpha-SiC crystals can be plastically deformed via relatively modest resolved shear stresses on the basal plane at temperatures as low as 550 degrees C. Two different methods to determine the activation parameters for dislocation glide have been examined. Transmission electron microscopy (TEM) was used to rationalize some of the results. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：277 / 289

页数：13

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