Proximity effects of negative charge groups contact-electrified on thin silicon oxide in air

被引：8

作者：

Uchihashi, T

Okusako, T

Sugawara, Y

Yamanishi, Y

Oasa, T

Morita, S

机构：

[1] HIROSHIMA UNIV, FAC SCI, LAB CRYSTAL PHYS, HIGASHIHIROSHIMA 739, JAPAN

[2] SUMITOMO MET IND LTD, ADV TECHNOL RES LABS, AMAGASAKI, HYOGO 660, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 08期

关键词：

D O I：

10.1063/1.361784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated proximity effects of negative charge groups contact-electrified on a thin silicon oxide in air with an initial separation (L) less than a few micrometers using a modified atomic force microscope. As a result, we found the following phenomena. Even for L similar to 2.0 mu m, distributions of two negative charge groups approach each other with time after contact electrification, though this feature is contrary to the expected recession due to the Coulomb repulsive force. For less than L similar to 1.6 mu m, each stable state joins in one negative charge group. These proximity effects seem to be induced by the interplay of the Coulomb repulsive force and the surface diffusion of charges. (C) 1996 American Institute of Physics.

引用

页码：4174 / 4177

页数：4

共 13 条

[1] ATOMIC FORCE MICROSCOPY USING OPTICAL INTERFEROMETRY [J].

ERLANDSSON, R ;

MCCLELLAND, GM ;

MATE, CM ;

CHIANG, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02) :266-270

[2] PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE [J].

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

CHAYAHARA, A ;

SUGAWARA, Y ;

YAMANISHI, Y ;

OASA, T ;

MORITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (12A) :6739-6745

[3] STABLE-UNSTABLE PHASE-TRANSITION OF DENSELY CONTRACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE [J].

MORITA, S ;

SUGAWARA, Y ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

CHAYAHARA, A ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (12B) :L1852-L1854

[4] REPRODUCIBLE AND CONTROLLABLE CONTACT ELECTRIFICATION ON A THIN INSULATOR [J].

MORITA, S ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

SUGAWARA, Y ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (11B) :L1701-L1703

[5] DISSIPATION OF CONTACT ELECTRIFIED ELECTRONS ON DIELECTRIC THIN-FILMS WITH SILICON SUBSTRATE [J].

OKUSAKO, T ;

UCHIHASHI, T ;

NAKANO, A ;

IDA, T ;

SUGAWARA, Y ;

MORITA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (7A) :L959-L961

[6] ELECTROSTATIC WRITING AND IMAGING USING A FORCE MICROSCOPE [J].

SAURENBACH, F ;

TERRIS, BD .

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 1992, 28 (01) :256-260

[7] OBSERVATION OF SINGLE CHARGE-CARRIERS BY FORCE MICROSCOPY [J].

SCHONENBERGER, C ;

ALVARADO, SF .

PHYSICAL REVIEW LETTERS, 1990, 65 (25) :3162-3164

[8] CHARGE FLOW DURING METAL-INSULATOR CONTACT [J].

SCHONENBERGER, C .

PHYSICAL REVIEW B, 1992, 45 (07) :3861-3864

[9] DEPOSITION AND IMAGING OF LOCALIZED CHARGE ON INSULATOR SURFACES USING A FORCE MICROSCOPE [J].

STERN, JE ;

TERRIS, BD ;

MAMIN, HJ ;

RUGAR, D .

APPLIED PHYSICS LETTERS, 1988, 53 (26) :2717-2719

[10] SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE [J].

SUGAWARA, Y ;

MORITA, S ;

FUKANO, Y ;

UCHIHASHI, T ;

OKUSAKO, T ;

CHAYAHARA, A ;

YAMANISHI, Y ;

OASA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (1A) :L70-L73

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