Initial stage of GaP/Si heteroepitaxial growth by metalorganic chemical vapor deposition

被引：22

作者：

Soga, T

Jimbo, T

Umeno, M

机构：

[1] NAGOYA INST TECHNOL,RES CTR MICROSTRUCT DEVICES,SHOWA KU,NAGOYA,AICHI 466,JAPAN

[2] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1996年 / 163卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)01046-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The epitaxial growth mechanisms for GaP on Si substrates using the metalorganic chemical vapor deposition method are described in this paper. The initial growth mode changes from island to layer type with increasing V/III ratio or gas pressure. The stress, the lattice deformation and the defect structure for GaP on Si substrates grown under high V/III ratio are characterized by varying the GaP thickness. The structure of the antiphase domain in GaP on Si with various misorientation angles is described. The growth conditions to obtain a low dislocation density GaP-on-Si with smooth surface morphology are presented.

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页码：165 / 170

页数：6

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