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CHARACTERIZATION OF ANTIPHASE DOMAIN IN GAP ON MISORIENTED (001) SI SUBSTRATE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：24
作者：
SOGA, T
NISHIKAWA, H
JIMBO, T
UMENO, M
机构：
[1] NAGOYA INST TECHNOL,DEPT PHYS,SHOWA KU,NAGOYA,AICHI 466,JAPAN
[2] NAGOYA INST TECHNOL,MICRO STRUCT DEVICES RES CTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN
[3] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,SHOWA KU,NAGOYA,AICHI 466,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 11A期
关键词：
GAP ON SI; ANTIPHASE DOMAIN; TEM; SELF-ANNIHILATION; MOCVD; ETCH PIT;
D O I：
10.1143/JJAP.32.4912
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Antiphase domains (APD's) in GaP grown on (001) Si with different misorientation angles (0-6-degrees) have been characterized by transmission electron microscopy (TEM) and etch pit observation. The self-annihilation of APD during growth is observed for GaP grown on exactly (001), 1-degrees-off (001) and 2-degrees-off (001) Si substrates, using TEM. A part of the APD is propagated to the surface in the case of exactly (001) and 1-degrees-off (001) Si substrates. All the APD's are annihilated in the early stage of growth for GaP grown on 20-off Si. On the other hand, no APD has been detected for GaP grown on 4-degrees-off and 6-degrees-off Si. The GaP surface morphology and the etch pit density are greatly affected by the APD's generated at the interface even if they are annihilated during the growth.
引用
收藏
页码：4912 / 4915
页数：4
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