Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride

被引：68

作者：

Sun, Jie ^{[1
]}

Lindvall, Niclas ^{[1
]}

Cole, Matthew T. ^{[2
]}

Teo, Kenneth B. K. ^{[3
]}

Yurgens, August ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden

[2] Univ Cambridge, Dept Engn, Elect Engn Div, Cambridge CB3 0FA, England

[3] AIXTRON Nanoinstruments Ltd, Cambridge CB24 4FQ, England

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 25期

基金：

瑞典研究理事会;

关键词：

carbon; chemical vapour deposition; electric resistance; pyrolysis; Raman spectra; self-assembly; thin films; TRANSISTORS; ELECTRODES;

D O I：

10.1063/1.3602921

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si(3)N(4)/Si at 1000 degrees C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp(2) graphitic structures. The films show ohmic behavior with a sheet resistance of similar to 2.3-10.5 k Omega/square at room temperature. An electric field effect of similar to 2-10% (V(G)=-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3602921]

引用

页数：3

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