III-nitride UV devices

被引:418
作者
Khan, MA [1 ]
Shatalov, M [1 ]
Maruska, HP [1 ]
Wang, HM [1 ]
Kuokstis, E [1 ]
机构
[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29028 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期
关键词
MOCVD; AlGaN; AllnGaN; ultraviolet; epitaxy; growth; light-emitting diode;
D O I
10.1143/JJAP.44.7191
中图分类号
O59 [应用物理学];
学科分类号
摘要
The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III-nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 run. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.
引用
收藏
页码:7191 / 7206
页数:16
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