Basics and applications of charge pumping in submicron MOSFETs (Reprinted from Proc. 1997 21st International Conference on Microelectronics, vol 2, pg 581-589, 1997)

In this paper, a review is made of the principles and the various applications of charge pumping in submicron MOSFETs. The use of the technique for the analysis of MOSFET degradation, energy, and both lateral and vertical spatial profiling of the interface traps, is discussed. The role and detection of so-called geometric components is illustrated, and the recently discovered ability of the technique to characterise single interface traps in submicron MOSFETs is demonstrated. Finally, the application of charge pumping in other device!;, such as SOI-MOSFETs, EEPROM-cells and power transistors is briefly indicated. (C) 1997 IEEE. Published by Elsevier Science Ltd. All rights reserved.