Si-InAs heterojunction Esaki tunnel diodes with high current densities

被引：86

作者：

Bjork, M. T. ^{[1
]}

Schmid, H. ^{[1
]}

Bessire, C. D. ^{[1
]}

Moselund, K. E. ^{[1
]}

Ghoneim, H. ^{[1
]}

Karg, S. ^{[1
]}

Lortscher, E. ^{[1
]}

Riel, H. ^{[1
]}

机构：

[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 16期

关键词：

NANOWIRE GROWTH;

D O I：

10.1063/1.3499365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si-InAs heterojunction p-n diodes were fabricated by growing InAs nanowires in oxide mask openings on silicon substrates. At substrate doping concentrations of 1 x 10(16) and 1 x 10(19) cm(-3), conventional diode characteristics were obtained, from which a valence band offset between Si and InAs of 130 meV was extracted. For a substrate doping of 4 x 10(19) cm(-3), heterojunction tunnel diode characteristics were obtained showing current densities in the range of 50 kA/cm(2) at 0.5 V reverse bias. In addition, in situ doping of the InAs wires was performed using disilane to further boost the tunnel currents up to 100 kA/cm(2) at 0.5 V reverse bias for the highest doping ratios. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499365]

引用

页数：3

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[1] SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH FOR HEXAGONAL-FACET LASERS [J].