MoS2 Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap

被引：1224

作者：

Lee, Hee Sung ^{[1
]}

Min, Sung-Wook ^{[1
]}

Chang, Youn-Gyung ^{[1
]}

Park, Min Kyu ^{[3
]}

Nam, Taewook ^{[2
]}

Kim, Hyungjun ^{[2
]}

Kim, Jae Hoon ^{[1
]}

Ryu, Sunmin ^{[3
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[3] Kyung Hee Univ, Dept Appl Chem, Yongin 446701, Gyeonggi, South Korea

来源：

NANO LETTERS | 2012年 / 12卷 / 07期

关键词：

MoS2; phototransistor; photoresponse; energy gap; PHOTOLUMINESCENCE; STATES;

D O I：

10.1021/nl301485q

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on the fabrication of top-gate phototransistors based on a few-layered MoS2 nanosheet with a transparent gate electrode. Our devices with triple MoS2 layers exhibited excellent photodetection capabilities for red light, while those with single- and double-layers turned out to be quite useful for green light detection. The varied functionalities are attributed to energy gap modulation by the number of MoS2 layers. The photoelectric probing on working transistors with the nanosheets demonstrates that single-layer MoS2 has a significant energy bandgap of 1.8 eV, while those of double- and triple-layer MoS2 reduce to 1.65 and 1.35 eV, respectively.

引用

页码：3695 / 3700

页数：6

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