A negative Vth cell architecture for highly scalable, excellently noise-immune, and highly reliable NAND flash memories

A new, negative V-th cell architecture is proposed where both the erased and the programmed state have negative Vth This architecture realizes highly scalable, excellently noise-immune, and highly reliable NAND flash memories, The program disturbance that limits the scaling of a local oxidation of silicon (LOCOS) width in a conventional NAND-type cell is drastically reduced. As a result, the scaling limit of the LOGOS width decreases from 0.56 to 0.45 mu m, which leads to 20% isolation width reduction, The proposed cell is essential for the future scaled shallow trench isolated cells because improved program disturb characteristics can be obtained irrespective of the process technology or feature size. New circuit techniques, such as a PMOS drive column latch and a V-cc-bit-line shield sensing method are also utilized to realize the proposed cell operation. By using these novel circuit technologies, array noise, such as a source-line noise [1] and an inter-bit-line capacitive coupling noise [2], are eliminated, Consequently, the Vth fluctuation due to array noise is reduced from 0.7 to 0.1 V, and the V-th distribution width decreases from 1.2 to 0.6 V, In addition to the smaller cell size and the high noise immunity, the proposed cell improves device reliability. The read disturb time increases by more than three orders of magnitude, and a highly reliable operation can be realized.