Room-temperature optically-pumped InGaSb quantum well lasers monolithically grown on Si(100) substrate

被引：18

作者：

Balakrishnan, G ^{[1
]}

Huang, SH ^{[1
]}

Khoshakhlagh, A ^{[1
]}

Hill, P ^{[1
]}

Amtout, A ^{[1
]}

Krishna, S ^{[1
]}

Donati, GP ^{[1
]}

Dawson, LR ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 09期

关键词：

D O I：

10.1049/el:20050564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature optically-pumped In0.2Ga0.8Sb quantum well lasers on Si are reported. The defect-free monolithic epistructure growth on a Si(100) substrate is initiated by an AlSb quantum dot nucleation layer followed by an AlSb/GaSb superlattice. The 13% mismatch between the AlSb and Si lattice is accommodated by misfit dislocations and associated crystallographic undulations in the AlSb buffer. The nucleation layer and buffer are characterised by atomic force microscopy and transmission electron microscopy. The lasing spectrum is characterised as a function of pump power and polarisation analysis.

引用

页码：531 / 532

页数：2

共 10 条

[1] Growth mechanisms of highly mismatched AlSb on a Si substrate [J].

Balakrishnan, G ;

Huang, S ;

Dawson, LR ;

Xin, YC ;

Conlin, P ;

Huffaker, DL .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[2]

BALAKRISHNAN G, 2005, IN PRESS JVST MAY

[3] GAAS-ON-SI - IMPROVED GROWTH-CONDITIONS, PROPERTIES OF UNDOPED GAAS, HIGH MOBILITY, AND FABRICATION OF HIGH-PERFORMANCE ALGAAS GAAS SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTORS AND RING OSCILLATORS [J].

CHAND, N ;

REN, F ;

MACRANDER, AT ;

VANDERZIEL, JP ;

SERGENT, AM ;

HULL, R ;

CHU, SNG ;

CHEN, YK ;

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2343-2353

[4] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI [J].

DEPPE, DG ;

HOLONYAK, N ;

NAM, DW ;

HSIEH, KC ;

JACKSON, GS ;

MATYI, RJ ;

SHICHIJO, H ;

EPLER, JE ;

CHUNG, HF .

APPLIED PHYSICS LETTERS, 1987, 51 (09) :637-639

[5] DISLOCATION REDUCTION BY IMPURITY DIFFUSION IN EPITAXIAL GAAS GROWN ON SI [J].

DEPPE, DG ;

HOLONYAK, N ;

HSIEH, KC ;

NAM, DW ;

PLANO, WE ;

MATYI, RJ ;

SHICHIJO, H .

APPLIED PHYSICS LETTERS, 1988, 52 (21) :1812-1814

[6] ALXGA1-XAS-GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER GROWN ON SI SUBSTRATE [J].

DEPPE, DG ;

CHAND, N ;

VANDERZIEL, JP ;

ZYDZIK, GJ .

APPLIED PHYSICS LETTERS, 1990, 56 (08) :740-742

[7] COMPUTATION OF EQUILIBRIUM SURFACE FLUCTUATIONS IN STRAINED EPITAXIAL-FILMS DUE TO INTERFACE MISFIT DISLOCATIONS [J].

JONSDOTTIR, F .

MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 1995, 3 (04) :503-520

[8] Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates [J].

Linder, KK ;

Phillips, J ;

Qasaimeh, O ;

Liu, XF ;

Krishna, S ;

Bhattacharya, P ;

Jiang, JC .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1355-1357

[9] OPTICALLY PUMPED LASER OSCILLATION IN THE 1.6-1.8 MU-M REGION FROM AL0.4GA0.6SB/GASB/AL0.4GA0.6SB DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM HETEROEPITAXY ON SI [J].

VANDERZIEL, JP ;

MALIK, RJ ;

WALKER, JF ;

MIKULYAK, RM .

APPLIED PHYSICS LETTERS, 1986, 48 (07) :454-456

[10] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE [J].

WINDHORN, TH ;

METZE, GM ;

TSAUR, BY ;

FAN, JCC .

APPLIED PHYSICS LETTERS, 1984, 45 (04) :309-311

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