Growth mechanisms of highly mismatched AlSb on a Si substrate

被引：71

作者：

Balakrishnan, G ^{[1
]}

Huang, S ^{[1
]}

Dawson, LR ^{[1
]}

Xin, YC ^{[1
]}

Conlin, P ^{[1
]}

Huffaker, DL ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 03期

关键词：

D O I：

10.1063/1.1850611

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the growth mechanisms of highly mismatched (Deltaa(0)/a(0)=13%) defect-free AlSb on Si(001) substrates. Nucleation occurs during the first few monolayers of AlSb deposition by crystalline quantum dot formation. With continued growth, the islands coalesce into a bulk material with no vertically propagating defects. Strain energy from the AlSb/Si interface is dissipated by crystallographic undulations in the zinc-blende lattice, as confirmed by high-resolution transmission electron microscopy (TEM) images. Reciprocal space analysis of the TEM images corroborates a crystallographic rotation associated with the undulations. The resulting AlSb material is >98% relaxed according to x-ray diffraction analysis. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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