Trion formation in narrow GaAs quantum well structures

被引：21

作者：

Teran, FJ ^{[1
]}

Eaves, L

Mansouri, L

Buhmann, H

Maude, DK

Potemski, M

Henini, M

Hill, G

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] CNRS, Grenoble High Magnet Field Lab, F-38042 Grenoble, France

[3] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[4] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England

来源：

PHYSICAL REVIEW B | 2005年 / 71卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.71.161309

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study the optical and electrical properties of n-i-n GaAs/AlAs double-barrier resonant tunneling diodes. Under illumination, new resonances appear in the current-voltage curves due to tunneling of photoexcited holes. By tuning the bias and the intensity of illumination, we can control independently the number of electrons and holes tunneling into the quantum well. This allows us to create charge conditions in the well that favor the formation of either positively charged, neutral, or negatively charged excitons. Our measured value of the binding energy of the second electron in the negative trion is significantly larger than that of the second hole in the positive trion.

引用

页数：4

共 22 条

[1] ELECTRIC-FIELD-INDUCED DISSOCIATION OF EXCITONS IN SEMICONDUCTOR QUANTUM WELLS [J].

BRUMJA ;

BASTARD, G .

PHYSICAL REVIEW B, 1985, 31 (06) :3893-3898

[2] PHOTOHOLE-INDUCED RESONANT-TUNNELING OF ELECTRONS IN SELECTIVELY ETCHED SMALL-AREA GAAS/ALAS DOUBLE-BARRIER DIODES [J].

BUHMANN, H ;

WANG, J ;

MANSOURI, L ;

BETON, PH ;

EAVES, L ;

HEATH, M ;

HENINI, M .

SOLID-STATE ELECTRONICS, 1994, 37 (4-6) :973-976

[3] ELECTRON-CONCENTRATION-DEPENDENT QUANTUM-WELL LUMINESCENCE - EVIDENCE FOR A NEGATIVELY CHARGED EXCITON [J].

BUHMANN, H ;

MANSOURI, L ;

WANG, J ;

BETON, PH ;

MORI, N ;

EAVES, L ;

HENINI, M ;

POTEMSKI, M .

PHYSICAL REVIEW B, 1995, 51 (12) :7969-7972

[4] ELECTROLUMINESCENCE RECOMBINATION FROM EXCITED-STATE CARRIER POPULATIONS IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES [J].

COCKBURN, JW ;

BUCKLE, PD ;

SKOLNICK, MS ;

WHITTAKER, DM ;

TAGG, WIE ;

HOGG, RA ;

GREY, R ;

HILL, G ;

PATE, MA .

PHYSICAL REVIEW B, 1992, 45 (23) :13757-13760

[5] Binding energy of charged excitons bound to interface defects of semiconductor quantum wells [J].

Dacal, LCO ;

Ferreira, R ;

Bastard, G ;

Brum, JA .

PHYSICAL REVIEW B, 2002, 65 (11) :1153251-1153255

[6] SEQUENTIAL TUNNELING DUE TO INTERSUBBAND SCATTERING IN DOUBLE-BARRIER RESONANT TUNNELING DEVICES [J].

EAVES, L ;

TOOMBS, GA ;

SHEARD, FW ;

PAYLING, CA ;

LEADBEATER, ML ;

ALVES, ES ;

FOSTER, TJ ;

SIMMONDS, PE ;

HENINI, M ;

HUGHES, OH ;

PORTAL, JC ;

HILL, G ;

PATE, MA .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :212-214

[7] Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wells [J].

Filinov, AV ;

Riva, C ;

Peeters, FM ;

Lozovik, YE ;

Bonitz, M .

PHYSICAL REVIEW B, 2004, 70 (03) :035323-1

[8] Negatively and positively charged excitons in GaAs/AlxGa1-xAs quantum wells [J].

Finkelstein, G ;

Shtrikman, H ;

BarJoseph, I .

PHYSICAL REVIEW B, 1996, 53 (04) :R1709-R1712

[9] Comparative study of the negatively and positively charged excitons in GaAs quantum wells [J].

Glasberg, S ;

Finkelstein, G ;

Shtrikman, H ;

Bar-Joseph, I .

PHYSICAL REVIEW B, 1999, 59 (16) :10425-10428

[10] Observation of charged X- and X+ excitons and metal-to-insulator transition in CdTe/CdMgZnTe modulation-doped quantum wells [J].

Haury, A ;

Arnoult, A ;

Chitta, VA ;

Cibert, J ;

D'Aubigne, YM ;

Tatarenko, S ;

Wasiela, A .

SUPERLATTICES AND MICROSTRUCTURES, 1998, 23 (05) :1097-1102

← 1 2 3 →