Determination of segregation, elastic strain and thin-foil relaxation in InxGa1-xAs islands on GaAs(001) by high-resolution transmission electron microscopy

被引：50

作者：

Tillmann, K

Thust, A

Lentzen, M

Swiatek, P

Forster, A

Urban, K

Laufs, W

Gerthsen, D

Remmele, T

Rosenauer, A

机构：

[1] FORSCHUNGSZENTRUM JULICH, INST SCHICHT & IONENTECH, D-52425 JULICH, GERMANY

[2] RHEIN WESTFAL TH AACHEN, LEHRSTUHL STAHLBAU, D-52056 AACHEN, GERMANY

[3] UNIV KARLSRUHE, LAB ELEKTRONENMIKROSKOPIE, D-76128 KARLSRUHE, GERMANY

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1996年 / 74卷 / 05期

关键词：

D O I：

10.1080/095008396180029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lattice-parameter mismatch-induced strains in three-dimensional coherent InxGa1-xAs islands grown on GaAs(001) substrates have been determined experimentally on an atomic scale by a digital analysis of images obtained by high-resolution transmission electron microscopy. The strain distributions in the islands were simulated by finite-element calculations. The simulated strain distributions are found to be in good agreement with measured data, taking into account the thin-foil relaxation of electron-transparent specimens in addition to the well known elastic strain relief. Clear evidence is given for an indium segregation causing a misfit gradient between the interface and the islands' surface.

引用

页码：309 / 315

页数：7

共 18 条

[1] ELASTIC MISFIT STRESS-RELAXATION IN HIGHLY STRAINED INGAAS/GAAS STRUCTURES [J].