Electrostatic potential for a hyperbolic probe tip near a semiconductor

被引:125
作者
Feenstra, RM [1 ]
机构
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 05期
关键词
D O I
10.1116/1.1606466
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The electrostatic potential resulting from a metallic probe tip near a semiconductor is examined. A solution is formulated assuming circular symmetry and using prolate spheroidal coordinates in the vacuum and Cartesian coordinates in the semiconductor. The result is most directly applied to the case of a hyperbolic probe tip, but other shapes (for example, a small hemispherical protrusion on the tip apex) can also be handled. Numerical results are given for representative cases that might be encountered in scanning probe microscopy. (C) 2003 American Vacuum Society.
引用
收藏
页码:2080 / 2088
页数:9
相关论文
共 25 条
[1]  
ABROMOWITZ M, 1965, HDB MATH FUNCTIONS, P752
[2]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[3]   REAL-SPACE OBSERVATION OF SURFACE-STATES ON SI(111)7X7 WITH THE TUNNELING MICROSCOPE [J].
BECKER, RS ;
GOLOVCHENKO, JA ;
HAMANN, DR ;
SWARTZENTRUBER, BS .
PHYSICAL REVIEW LETTERS, 1985, 55 (19) :2032-2034
[4]   Tip-induced band bending by scanning tunneling spectroscopy of the states of the tip-induced quantum dot on InAs(110) [J].
Dombrowski, R ;
Steinebach, C ;
Wittneven, C ;
Morgenstern, M ;
Wiesendanger, R .
PHYSICAL REVIEW B, 1999, 59 (12) :8043-8048
[5]   Scanning tunneling potentiometry of semiconductor junctions [J].
Dong, Y ;
Feenstra, RM ;
Hey, R ;
Ploog, KH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04) :1677-1681
[6]  
Feenstra RM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.165204
[7]   TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS [J].
FEENSTRA, RM .
PHYSICAL REVIEW B, 1994, 50 (07) :4561-4570
[8]   TUNNELING SPECTROSCOPY OF THE GAAS(110) SURFACE [J].
FEENSTRA, RM ;
STROSCIO, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :923-929
[9]   THIN-FOIL SURFACE-PLASMON MODIFICATION IN SCANNING-PROBE MICROSCOPY [J].
FERRELL, TL .
PHYSICAL REVIEW B, 1994, 50 (19) :14738-14741
[10]   VOLTAGE DROP IN THE EXPERIMENTS OF SCANNING TUNNELING MICROSCOPY FOR SI [J].
FLORES, F ;
GARCIA, N .
PHYSICAL REVIEW B, 1984, 30 (04) :2289-2291