Scanning tunneling potentiometry of semiconductor junctions

被引：20

作者：

Dong, Y ^{[1
]}

Feenstra, RM

Hey, R

Ploog, KH

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.1491535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for performing scanning tunneling potentiometry of semiconductor heterojunctions is described. The,method yields a direct measure of the electrostatic potential distribution across the interface, with microscopic resolution. The measurement is accomplished by scanning the probe tip at constant sample-tip separation across the junction, and adjusting the sample-tip voltage to maintain a constant tunnel current. An example is given of potentiometry across a GaAs pn junction. (C) 2002 American Vacuum Society.

引用

页码：1677 / 1681

页数：5

共 16 条

[1]

Duke C. B., 1969, Tunneling in Solids

[2] Comparison of electronic and mechanical contrast in scanning tunneling microscopy images of semiconductor heterojunctions [J].

Feenstra, RM .

PHYSICA B-CONDENSED MATTER, 1999, 273-4 :796-802

[3] CROSS-SECTIONAL IMAGING AND SPECTROSCOPY OF GAAS DOPING SUPERLATTICES BY SCANNING TUNNELING MICROSCOPY [J].

FEENSTRA, RM ;

YU, ET ;

WOODALL, JM ;

KIRCHNER, PD ;

LIN, CL ;

PETTIT, GD .

APPLIED PHYSICS LETTERS, 1992, 61 (07) :795-797

[4] TUNNELING SPECTROSCOPY OF THE (110)-SURFACE OF DIRECT-GAP III-V SEMICONDUCTORS [J].

FEENSTRA, RM .

PHYSICAL REVIEW B, 1994, 50 (07) :4561-4570

[5] TUNNELING SPECTROSCOPY OF THE SI(111)2X1 SURFACE [J].

FEENSTRA, RM ;

STROSCIO, JA ;

FEIN, AP .

SURFACE SCIENCE, 1987, 181 (1-2) :295-306

[6] SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF THE SI(111)5X5 SURFACE [J].

FEENSTRA, RM ;

LUTZ, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (02) :716-720

[7] Heterojunction band offset engineering [J].

Franciosi, A ;

Van de Walle, CG .

SURFACE SCIENCE REPORTS, 1996, 25 (1-4) :1-+

[8]

GOMER R, 1961, FIELD EMISSION FIELD, P19

[9] OBSERVATION OF PN JUNCTIONS ON IMPLANTED SILICON USING A SCANNING TUNNELING MICROSCOPE [J].

HOSAKA, S ;

HOSOKI, S ;

TAKATA, K ;

HORIUCHI, K ;

NATSUAKI, N .

APPLIED PHYSICS LETTERS, 1988, 53 (06) :487-489

[10] DIRECT MEASUREMENT OF POTENTIAL STEPS AT GRAIN-BOUNDARIES IN THE PRESENCE OF CURRENT FLOW [J].

KIRTLEY, JR ;

WASHBURN, S ;

BRADY, MJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (15) :1546-1549

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