Electrolyte Gate-Controlled Kondo Effect in SrTiO3

被引：156

作者：

Lee, Menyoung ^{[1
]}

Williams, J. R. ^{[1
]}

Zhang, Sipei ^{[2
]}

Frisbie, C. Daniel ^{[2
]}

Goldhaber-Gordon, D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 25期

基金：

美国国家科学基金会;

关键词：

THIN-FILM TRANSISTORS; INTERFACES; SUPERCONDUCTIVITY; ELECTRONICS; ALLOYS; MAGNETORESISTIVITY; COEXISTENCE; SURFACE; FIELD;

D O I：

10.1103/PhysRevLett.107.256601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report low-temperature, high-field magnetotransport measurements of SrTiO3 gated by an ionic gel electrolyte. A saturating resistance upturn and negative magnetoresistance that signal the emergence of the Kondo effect appear for higher applied gate voltages. This observation, enabled by the wide tunability of the ionic gel-applied electric field, promotes the interpretation of the electric field-effect-induced 2D electron system in SrTiO3 as an admixture of magnetic Ti3+ ions, i.e., localized and unpaired electrons, and delocalized electrons that partially fill the Ti 3d conduction band.

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页数：5

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