Temporal evolution of dot patterns during ion sputtering

被引:72
作者
Bobek, T
Facsko, S
Kurz, H
Dekorsy, T
Xu, M
Teichert, C
机构
[1] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52056 Aachen, Germany
[2] Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany
[3] Montan Univ Leoben, Inst Phys, A-8700 Leoben, Austria
关键词
D O I
10.1103/PhysRevB.68.085324
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The temporal evolution of the morphology of GaSb surfaces induced by ion bombardment is investigated. The erosion process with normal incident argon ions forms a regular dot pattern that shows an increase of ordering among the dots with increasing sputtering time. The pattern stabilizes to a highly uniform, hexagonally ordered dot pattern for very long times. The degree of ordering is determined by quantitative analysis of the surface roughness and the power spectral density of the surface pattern using atomic force microscopy. A comparison of the experimental results with numerical integrations of the unstabilized Kuramoto-Sivashinsky equation shows that this equation cannot reproduce essential details of the experimental pattern observed.
引用
收藏
页数:6
相关论文
共 17 条
[1]   THEORY OF RIPPLE TOPOGRAPHY INDUCED BY ION-BOMBARDMENT [J].
BRADLEY, RM ;
HARPER, JME .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04) :2390-2395
[2]   DYNAMIC SCALING OF ION-SPUTTERED SURFACES [J].
CUERNO, R ;
BARABASI, AL .
PHYSICAL REVIEW LETTERS, 1995, 74 (23) :4746-4749
[3]   Energy dependence of quantum dot formation by ion sputtering [J].
Facsko, S ;
Kurz, H ;
Dekorsy, T .
PHYSICAL REVIEW B, 2001, 63 (16)
[4]   Ion-induced formation of regular nanostructures on amorphous GaSb surfaces [J].
Facsko, S ;
Bobek, T ;
Kurz, H ;
Dekorsy, T ;
Kyrsta, S ;
Cremer, R .
APPLIED PHYSICS LETTERS, 2002, 80 (01) :130-132
[5]   Formation of ordered nanoscale semiconductor dots by ion sputtering [J].
Facsko, S ;
Dekorsy, T ;
Koerdt, C ;
Trappe, C ;
Kurz, H ;
Vogt, A ;
Hartnagel, HL .
SCIENCE, 1999, 285 (5433) :1551-1553
[6]   Roughness evolution of ion sputtered rotating InP surfaces: Pattern formation and scaling laws [J].
Frost, F ;
Schindler, A ;
Bigl, F .
PHYSICAL REVIEW LETTERS, 2000, 85 (19) :4116-4119
[7]   Production of ordered silicon nanocrystals by low-energy ion sputtering [J].
Gago, R ;
Vázquez, L ;
Cuerno, R ;
Varela, M ;
Ballesteros, C ;
Albella, JM .
APPLIED PHYSICS LETTERS, 2001, 78 (21) :3316-3318
[8]   Quantum dot and hole formation in sputter erosion [J].
Kahng, B ;
Jeong, H ;
Barabási, AL .
APPLIED PHYSICS LETTERS, 2001, 78 (06) :805-807
[9]   SURFACE SELF-DIFFUSION ON SI FROM THE EVOLUTION OF PERIODIC ATOMIC STEP ARRAYS [J].
KEEFFE, ME ;
UMBACH, CC ;
BLAKELY, JM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1994, 55 (10) :965-973
[10]   Anomaly in numerical integrations of the Kardar-Parisi-Zhang equation [J].
Lam, CH ;
Shin, FG .
PHYSICAL REVIEW E, 1998, 57 (06) :6506-6511