Block Copolymer Self-Assembly-Directed Single-Crystal Homo- and Heteroepitaxial Nanostructures

被引:107
作者
Arora, Hitesh [1 ,2 ]
Du, Phong [1 ]
Tan, Kwan W. [1 ]
Hyun, Jerome K. [3 ]
Grazul, John [4 ]
Xin, Huolin L. [3 ]
Muller, David A. [5 ,6 ]
Thompson, Michael O. [1 ]
Wiesner, Ulrich [1 ]
机构
[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[2] Cornell Univ, Sch Chem & Biomol Engn, Ithaca, NY 14853 USA
[3] Cornell Univ, Dept Phys, Ithaca, NY 14853 USA
[4] Cornell Univ, Cornell Ctr Mat Res, Ithaca, NY 14853 USA
[5] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[6] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
关键词
TIME-RESOLVED REFLECTIVITY; MESOPOROUS METAL-OXIDES; THIN-FILMS; SILICON; ARRAYS; LITHOGRAPHY; CRYSTALLIZATION;
D O I
10.1126/science.1193369
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Epitaxy is a widely used method to grow high-quality crystals. One of the key challenges in the field of inorganic solids is the development of epitaxial single-crystal nanostructures. We describe their formation from block copolymer self-assembly-directed nanoporous templates on single-crystal Si backfilled with Si or NiSi through a laser-induced transient melt process. Depending on thickness, template removal leaves either an array of nanopillars or porous nanostructures behind. For stoichiometric NiSi deposition, the template pores provide confinement, enabling heteroepitaxial growth. Irradiation through a mask provides access to hierarchically structured materials. These results on etchable and non-etchable materials suggest a general strategy for growing epitaxial single-crystal nanostructured thin films for fundamental studies and a wide variety of applications, including energy conversion and storage.
引用
收藏
页码:214 / 219
页数:6
相关论文
共 31 条
  • [1] Direct fabrication of large micropatterned single crystals
    Aizenberg, J
    Muller, DA
    Grazul, JL
    Hamann, DR
    [J]. SCIENCE, 2003, 299 (5610) : 1205 - 1208
  • [2] [Anonymous], 2000, Spatial tessellations: concepts and applications of Voronoi diagrams
  • [3] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
    AUSTON, DH
    SURKO, CM
    VENKATESAN, TNC
    SLUSHER, RE
    GOLOVCHENKO, JA
    [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440
  • [4] Ultrafast and direct imprint of nanostructures in silicon
    Chou, SY
    Keimel, C
    Gu, J
    [J]. NATURE, 2002, 417 (6891) : 835 - 837
  • [5] Microdomain patterns from directional eutectic solidification and epitaxy
    De Rosa, C
    Park, C
    Thomas, EL
    Lotz, B
    [J]. NATURE, 2000, 405 (6785) : 433 - 437
  • [6] An off-normal fibre-like texture in thin films on single-crystal substrates
    Detavernier, C
    Özcan, AS
    Jordan-Sweet, J
    Stach, EA
    Tersoff, J
    Ross, FM
    Lavoie, C
    [J]. NATURE, 2003, 426 (6967) : 641 - 645
  • [7] Additive-driven phase-selective chemistry in block copolymer thin films: The convergence of top-down and bottom-up approaches
    Du, P
    Li, MQ
    Douki, K
    Li, XF
    Garcia, CRW
    Jain, A
    Smilgies, DM
    Fetters, LJ
    Gruner, SM
    Wiesner, U
    Ober, CK
    [J]. ADVANCED MATERIALS, 2004, 16 (12) : 953 - +
  • [8] Nanostructured Calcite Single Crystals with Gyroid Morphologies
    Finnemore, Alexander S.
    Scherer, Maik R. J.
    Langford, Richard
    Mahajan, Sumeet
    Ludwigs, Sabine
    Meldrum, Fiona C.
    Steiner, Ullrich
    [J]. ADVANCED MATERIALS, 2009, 21 (38-39) : 3928 - +
  • [9] TIME-RESOLVED OPTICAL STUDIES OF OXIDE-ENCAPSULATED SILICON DURING PULSED LASER MELTING
    JELLISON, GE
    LOWNDES, DH
    SHARP, JW
    [J]. JOURNAL OF MATERIALS RESEARCH, 1988, 3 (03) : 498 - 505
  • [10] TIME-RESOLVED REFLECTIVITY MEASUREMENTS ON SILICON AND GERMANIUM USING A PULSED EXCIMER KRF LASER-HEATING BEAM
    JELLISON, GE
    LOWNDES, DH
    MASHBURN, DN
    WOOD, RF
    [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2407 - 2415