Doping dependent NH3 sensing of indium oxide nanowires

被引：164

作者：

Zhang, DJ ^{[1
]}

Li, C ^{[1
]}

Liu, XL ^{[1
]}

Han, S ^{[1
]}

Tang, T ^{[1
]}

Zhou, CW ^{[1
]}

机构：

[1] Univ So Calif, Dept EE Electrophys, Los Angeles, CA 90089 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 09期

关键词：

D O I：

10.1063/1.1604194

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

NH3 gas sensing properties of In2O3 nanowires were carefully studied. Change of conductance in opposite directions was observed with different nanowire sensors. We suggest that this differential response is caused by various doping concentrations in the semiconducting In2O3 nanowires. In addition, we have also investigated a "gate-screening effect" exhibited in our nanowire chemical sensors at high NH3 concentrations, which is induced by adsorbed NH3 molecules working as charge traps. Both the doping-dependent response and the gate-screening effect will be especially valuable and helpful for understanding the detailed sensing mechanism of semiconducting metal oxide materials. (C) 2003 American Institute of Physics.

引用

页码：1845 / 1847

页数：3

共 14 条

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