Graphene-Based Ambipolar RF Mixers

被引：208

作者：

Wang, Han ^{[1
]}

Hsu, Allen ^{[1
]}

Wu, Justin ^{[1
]}

Kong, Jing ^{[1
]}

Palacios, Tomas ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

基金：

美国国家科学基金会;

关键词：

Ambipolar conduction; chemical vapor deposition (CVD) graphene; graphene field-effect transistors (GFET); mixers; TRANSISTORS;

D O I：

10.1109/LED.2010.2052017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The combination of the unique properties of graphene with new device concepts and nanotechnology can overcome some of the main limitations of traditional electronics in terms of maximum frequency, linearity, and power dissipation. In this letter, we demonstrate the use of the ambipolar-transport properties of graphene for the fabrication of a new kind of RF mixer device. Due to the symmetrical ambipolar conduction in graphene, graphene-based mixers can effectively suppress odd-order intermodulations and lead to lower spurious emissions in the circuit. The mixer operation was demonstrated at a frequency of 10 MHz using graphene grown by chemical vapor deposition on a Ni film and then transferred to an insulating substrate. The maximum operating frequency was limited by the device geometry and the measurement setup, and a high-quality factor was observed with a third-order intercept point of +13.8 dBm.

引用

页码：906 / 908

页数：3

共 16 条

[1] C-band linear resistive wide bandgap FET mixers [J].