Role of molecular surface passivation in electrical transport properties of InAs nanowires

被引：102

作者：

Hang, Qingling ^{[1
]}

Wang, Fudong ^{[2
,3
]}

Carpenter, Patrick D. ^{[1
]}

Zemlyanov, Dmitri ^{[1
]}

Zakharov, Dmitri ^{[1
]}

Stach, Eric A. ^{[1
]}

Buhro, William E. ^{[2
,3
]}

Janes, David B. ^{[1
]}

机构：

[1] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[2] Washington Univ, Dept Chem, St Louis, MO 63130 USA

[3] Washington Univ, Ctr Mat Innovat, St Louis, MO 63130 USA

来源：

NANO LETTERS | 2008年 / 8卷 / 01期

关键词：

D O I：

10.1021/nl071888t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The existence of large densities of surface states on InAs pins the surface Fermi level above the conduction band and also degrades the electron mobility in thin films and nanowires. Field effect transistors have been fabricated and characterized in the "as fabricated" state and after surface passivation with 1-octadecanethiol (ODT). Electrical characterization of the transistors shows that the subthreshold slope and electron mobility in devices passivated with ODT are superior to the respective values in unpassivated devices. An X-ray photoelectron spectroscopy study of ODT passivated undoped InAs nanowires indicates that sulfur from ODT is bonded to In on the InAs nanowires. Simulations using a two-dimensional device simulator (MEDICI) show that the improvements in device performance after ODT passivation can be quantified in terms of a decrease of interface trap electron donor states, shifts in fixed interfacial charge, and changes in body and surface mobilities.

引用

页码：49 / 55

页数：7

共 32 条

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