P-Type Nitrogen-Doped ZnO Nanoparticles Stable under Ambient Conditions

被引：115

作者：

Chavillon, Benoit ^{[1
]}

Cario, Laurent ^{[1
]}

Renaud, Adele ^{[1
]}

Tessier, Franck ^{[3
]}

Chevire, Francois ^{[3
]}

Boujtita, Mohammed ^{[2
]}

Pellegrin, Yann ^{[2
]}

Blart, Errol ^{[2
]}

Smeigh, Amanda ^{[4
]}

Hammarstrom, Leif ^{[4
]}

Odobel, Fabrice ^{[2
]}

Jobic, Stephane ^{[1
]}

机构：

[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, UMR6502, F-44322 Nantes 3, France

[2] Univ Nantes, CNRS, CEISAM, UMR6230, F-44322 Nantes 3, France

[3] Univ Rennes 1, UMR CNRS Sci Chim Rennes 6226, Equipe Verres & Ceram, F-35042 Rennes, France

[4] Uppsala Univ, Dept Photochem & Mol Sci, S-75120 Uppsala, Sweden

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 01期

基金：

瑞典研究理事会;

关键词：

ZINC-OXIDE; TITANIA NANOPARTICLES; UNDOPED ZNO; THIN-FILMS; DECOMPOSITION; DEPOSITION; PEROXIDE; CONDUCTIVITY; DEVICES; LAOCUS;

D O I：

10.1021/ja208044k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Zinc oxide is considered as a very promising material for optoelectronics. However, to date, the difficulty in producing stable p-type ZnO is a bottleneck, which hinders the advent of ZnO-based devices. In that context, nitrogen-doped zinc oxide receives much attention. However, numerous reviews report the controversial character of p-type conductivity in N-doped ZnO, and recent theoretical contributions explain that N-doping alone cannot lead, to p-typeness in Zn-rich ZnO. We report here that the ammonolysis at low temperature or ZnO2 yields pure wurtzite-type N-doped ZnO nanoparticles with an extraordinarily large amount of Zn vacancies (up to 20%). Electrochemical and transient spectroscopy studies demonstrate that these Zn-poor nanoparticles exhibit a p-type conductivity that is stable over more than 2 years under ambient conditions.

引用

页码：464 / 470

页数：7

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