Mobile ionic impurities in poly(vinyl alcohol) gate dielectric:: Possible source of the hysteresis in organic field-effect transistors

被引：109

作者：

Egginger, Martin ^{[1
]}

Irimia-Vladu, Mihai

Schwoediauer, Reinhard

Tanda, Andreas ^{[2
]}

Frischauf, Irene ^{[3
]}

Bauer, Siegfried

Sariciftci, Niyazi Serdar ^{[1
]}

机构：

[1] Johannes Kepler Univ Linz, Linz Inst Organ Solar Cells, A-4040 Linz, Austria

[2] Plast Elect GmbH, A-4040 Linz, Austria

[3] Johannes Kepler Univ Linz, Inst Biophys, A-4040 Linz, Austria

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 05期

关键词：

D O I：

10.1002/adma.200701479

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Ionic impurities in gate dielectrics are Outlined as a possible source for threshold voltage shifts in organic field effect transistors. Using poly(vinyl alcohol) containing sodium acetate impurities we show how transistors can be designed for memory elements or polymer integrated circuits.

引用

页码：1018 / +

页数：6

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