Quantum confinement effects in nano-silicon thin films

被引：43

作者：

Das, D ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Energy Res Unit, Calcutta 700032, W Bengal, India

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 12期

关键词：

nanostructures; optical properties; quantum localization; luminescence;

D O I：

10.1016/S0038-1098(98)00478-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Stacked layer Si:H films deposited by interrupted growth and H-plasma exposure were characterized by optical and IR absorption, Raman scattering, TEM and PL studies. Hydrogenation of the network and its structure could be precisely controlled. Extended H-plasma exposure demonstrated quantum confinement effects and the growth of nanostructures in silicon. (C) 1998 Published by Elsevier Science Ltd.

引用

页码：983 / 987

页数：5

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