Imaging dissipation and hot spots in carbon nanotube network transistors

被引:70
作者
Estrada, David [1 ]
Pop, Eric [1 ,2 ]
机构
[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA
[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA
关键词
TRANSPARENT; CIRCUITS;
D O I
10.1063/1.3549297
中图分类号
O59 [应用物理学];
学科分类号
摘要
We use infrared thermometry of carbon nanotube network (CNN) transistors and find the formation of distinct hot spots during operation. However, the average CNN temperature at breakdown is significantly lower than expected from the breakdown of individual nanotubes, suggesting extremely high regions of power dissipation at the CNN junctions. Statistical analysis and comparison with a thermal model allow the estimate of an upper limit for the average tube-tube junction thermal resistance, similar to 4.4 x 10(11) K/W (thermal conductance of similar to 2.27 pW/K). These results indicate that nanotube junctions have a much greater impact on CNN transport, dissipation, and reliability than extrinsic factors such as low substrate thermal conductivity. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549297]
引用
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页数:3
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