Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes

被引：52

作者：

liao, Albert ^{[1
]}

Zhao, Yang ^{[1
]}

Pop, Eric ^{[1
,2
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Micro & Nanotechnol Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 25期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.101.256804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Semiconducting single-wall carbon nanotubes under high electric field stress (similar to 10 V/mu m) display a remarkable current increase due to avalanche generation of free electrons and holes. Unlike other materials, the avalanche process in such 1D quantum wires involves access to the third subband and is insensitive to temperature but strongly dependent on diameter similar to exp(-1/d(2)). Comparison with a theoretical model yields a novel approach to obtain the inelastic optical phonon emission length lambda(OP,ems)approximate to 15d nm. The new results underscore the importance of multiband transport in 1D molecular wires.

引用

页数：4

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