The Role of Leakage Currents and the Gate Oxide Width in Molecular Transistors

被引：5

作者：

Mentovich, Elad D. ^{[1
,2
]}

Richter, Shachar ^{[1
,2
]}

机构：

[1] Tel Aviv Univ, Sch Chem, IL-69978 Tel Aviv, Israel

[2] Tel Aviv Univ, Univ Ctr Nanosci & Nanotechnol, IL-69978 Tel Aviv, Israel

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 01期

基金：

以色列科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; 3-TERMINAL DEVICES; ELECTRONICS; FABRICATION;

D O I：

10.1143/JJAP.49.01AB04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We utilize a central-gate vertical molecular transistor to evaluate the leakage current in such devices. We investigate the effect of the gate-oxide width on the leakage current and on the degree of the penetration of the gate-induced electric field through the molecular channel. It is shown that though widening of the oxide layer reduces the source-gate leakage current dramatically, it results in the reduction of the gate-voltage effectiveness. (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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