Theoretical and experimental considerations on the spin field effect transistor

被引：24

作者：

Bournel, A ^{[1
]}

Delmouly, V ^{[1
]}

Dollfus, P ^{[1
]}

Tremblay, G ^{[1
]}

Hesto, P ^{[1
]}

机构：

[1] Univ Paris Sud, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2001年 / 10卷 / 1-3期

关键词：

spin; semiconductors; magnetic thin films;

D O I：

10.1016/S1386-9477(01)00059-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We propose a study of the spin field effect transistor (spin-FET). as a structure for the investigation of the physics of spin polarized transport in ferromagnet/semiconductor structures and as a device For fast electronics. From Monte Carlo simulation of spin-polarized transport in the channel of this device, we develop in a first part theoretical considerations about the scaling of the spin-FET. In particular, we point out that the magnetization of the ferromagnetic source contact has to be perpendicular to ferromagnet/semiconductor interface. Tn a second part, we present a study of the magnetic properties of ultrathin Co layers deposited on GaAs with the aim of obtaining a perpendicular magnetization. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：86 / 90

页数：5

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