Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing

被引：9

作者：

Koseva, R. ^{[1
]}

Moench, I. ^{[1
]}

Meier, D. ^{[2
]}

Schumann, J. ^{[1
]}

Arndt, K-F ^{[3
]}

Schultz, L. ^{[2
]}

Zhao, B. ^{[4
]}

Schmidt, O. G. ^{[1
]}

机构：

[1] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[2] IFW Dresden, Inst Metall Mat, D-01069 Dresden, Germany

[3] Tech Univ Dresden, Inst Phys Chem Polymers, D-01062 Dresden, Germany

[4] Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 17期

基金：

中国国家自然科学基金;

关键词：

Bismuth; Thin films; Hillocks; Nanoscale mechanical polishing; Hall sensors; SCANNING HALL PROBE; ELECTRON-BEAM LITHOGRAPHY; MICROSCOPY; MAGNETOMETRY;

D O I：

10.1016/j.tsf.2012.04.040

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bismuth thin films were grown on oxidized Si substrates by electron beam evaporation. The films showed clear tendency to form hillocks inducing large surface roughness. The evolution of hillocks with film thickness and deposition rate was studied. In order to improve the surface quality of the Bi films a nanoscale mechanical polishing was performed. Upon polishing. hillocks-free Bi thin films were obtained without influencing the crystalline structure and the resistivity of the films. The achieved film surface quality allows to prepare high quality Bi Hall probes with an active area down to the nm(2) range promising for advanced device performance. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：5589 / 5592

页数：4

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